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IRF3808S - N-Channel MOSFET

Features

  • ƽ VDSS = 75V ƽ RDS(ON) = 0.007Ÿ ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current ķ Power Dissipation Single Pulse Avalanche Energy ĸ Avalanche Current ķ Repetitive Avalanche Energy Ľ Peak Di.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel MOSFET IRF3808S (KRF3808S) Ƶ Features ƽ VDSS = 75V ƽ RDS(ON) = 0.007Ÿ ƽ ID = 106A ļ ƽ Advanced Process Technology ƽ Ultra Low On-Resistance ƽ Dynamic dv/dt Rating ƽ 175°C Operating Temperature ƽ Fast Switching ƽ Repetitive Avalanche Allowed up to Tjmax D TraMnOsiSsFtoErsT G S Ƶ Absolute Maximum Ratings Ta = 25ć Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current, VGS @ 10V Pulsed Drain Current ķ Power Dissipation Single Pulse Avalanche Energy ĸ Avalanche Current ķ Repetitive Avalanche Energy Ľ Peak Diode Recovery dv/dt Ĺ Thermal Resistance Junction-to-Case Thermal Resistance.
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