2SA1411 - Transistor

Kexin

Datasheet Details

Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V +0.1 2.4-0.1 Unit: mm +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating -25 -25 -10 -150 200 Unit V V V mA mW Junc.

📁 2SA1411 Similar Datasheet

2SA1412 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SA1412-Z - PNP Transistor (NEC)
2SA1413 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SA1413-Z - PNP Transistor (INCHANGE)
2SA1415 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1416 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA1417 - PNP / NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SA1418 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by Kexin

Published: Oct 25, 2013 |