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SJMN11S60I - N-Channel Super Junction MOSFET

Features

  • Drain-Source voltage: VDS=650V (@TJ=150C).
  • Low drain-source On resistance: RDS(on)=0.34Ω (Typ. ).
  • Low input capacitance and gate charge.
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-PAK Marking Information SJMN 11S60 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted.

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Datasheet Details

Part number SJMN11S60I
Manufacturer KODENSHI KOREA
File Size 538.72 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet SJMN11S60I Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.34Ω (Typ.)  Low input capacitance and gate charge  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-PAK Marking Information SJMN 11S60 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -.
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