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TIP112 EPITAXIAL PLANAR NPN TRANSISTOR

TIP112 Description

SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE..

TIP112 Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117. TIP112 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collecto

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Datasheet Details

Part number
TIP112
Manufacturer
KEC
File Size
648.73 KB
Datasheet
TIP112-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR KEC
KEC TIP112-like datasheet