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KMB060N60PA - Trench MOSFET

Description

It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications E A O C F G B Q I K M L J D H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3

Features

  • VDSS= 60V, ID= 60A Drain-Source ON Resistance : RDS(ON)=14m (Max. ) @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + MOSFET.

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Datasheet Details

Part number KMB060N60PA
Manufacturer KEC
File Size 508.50 KB
Description Trench MOSFET
Datasheet download datasheet KMB060N60PA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB060N60PA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications E A O C F G B Q I K M L J D H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 FEATURES VDSS= 60V, ID= 60A Drain-Source ON Resistance : RDS(ON)=14m (Max.) @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.
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