Click to expand full text
JW1568K
650V Half-Bridge GaN with Gate Driver
Preliminary Specifications Subject to Change without Notice
DESCRIPTION
FEATURES
The JW1568K is an advanced power system-inpackage integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 220 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The JW1568K features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions. The JW1568K is available in the 6mm*8mm QFN package.