Datasheet4U Logo Datasheet4U.com

RFM12N35 N-Channel Power MOSFET

RFM12N35 Description

Semiconductor RFM12N35, RFM12N40 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conv.

RFM12N35 Features

* 12A, 350V and 400V
* rDS(ON) = 0.500Ω [ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN Ordering Information PART NUMBER RFM12N35 RFM12

📥 Download Datasheet

Preview of RFM12N35 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RFM12N35
Manufacturer
Intersil Corporation
File Size
31.37 KB
Datasheet
RFM12N35_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

📁 Related Datasheet

  • RFM12B - Universal ISM Band FSK Transceiver Module (Hope RF)
  • RFM12BP - UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE (HOPERF)
  • RFM12P08 - P-Channel Power MOSFET (General Semiconductor)
  • RFM10N12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
  • RFM10N15 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
  • RFM10P12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
  • RFM10P15 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
  • RFM110 - single-chip OOK transmitters (HOPERF)

📌 All Tags

N-Channel Power MOSFET Intersil Corporation
Intersil Corporation RFM12N35-like datasheet