RFM12N08 Datasheet - Intersil Corporation

RFM12N08 N-Channel Power MOSFET

RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet October 1998 File Number 1386.2 [ /Title (RFM12 These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching N10, transistors requiring high speed and low gate drive power. RFP12 These types can be operated directly from integrated N08, circuits. RFP.

RFM12N08 Features

* 12A, 80V and 100V

* rDS(ON) = 0.200Ω

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow prop

RFM12N08_IntersilCorporation.pdf