Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features
- 4A, 120V and 150V.
- rDS(ON) = 0.400Ω.
- SOA is Power Dissipation Limited.
- Nanosecond Switching Speeds.
- Linear Transfer Characteristics.
- High Input Impedance.
- Majority Carrier Device
[ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark
Ordering Information
PART NUMBER RFL4N12 RFL4N15 PACKA.
RFL4N15_IntersilCorporation.pdf
