RFL1N12 - N-Channel Power MOSFET

Intersil Corporation

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Datasheet Details

Part number	RFL1N12
Manufacturer	Intersil Corporation
File Size	43.24 KB
Description	N-Channel Power MOSFET
Datasheet	RFL1N12_IntersilCorporation.pdf

RFL1N12 Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

1A, 120V and 150V.
rDS(ON) = 1.9Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFL1N12 RFL1N15.

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Published: Apr 16, 2005 |