RFL1N15 - N-Channel Power MOSFET

Intersil Corporation

📥 Download Datasheet

RFL1N15 Datasheet Preview — Preview of RFL1N15 PDF

Datasheet Details

Part number	RFL1N15
Manufacturer	Intersil Corporation
File Size	43.24 KB
Description	N-Channel Power MOSFET
Datasheet	RFL1N15_IntersilCorporation.pdf

RFL1N15 Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

1A, 120V and 150V.
rDS(ON) = 1.9Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFL1N12 RFL1N15.

📁 RFL1N15 Similar Datasheet

RFLA1010 - HIGH-LINEARITY AMPLIFIER (RF Micro Devices)
RFLA1018 - VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER (RFMD)
RFLA1018S - High Linearity Amplifier (RF Micro Devices)
RFLA1022 - High Linearity Amplifier (RF Micro Devices)
RFLA1038 - Variable Gain Low Noise High Linearity Amplifier (RF Micro Devices)
RFLA2018 - Variable Gain Low Noise High Linearity Amplifier (RFMD)
RFLA9002 - Dual Low Noise Amplifier (RF Micro Devices)
RFLA9003 - Dual Low Noise Amplifier (RF Micro Devices)

Other Datasheets by Intersil Corporation

RFL1N15L - N-Channel Power MOSFET
RFL1N10 - N-Channel Power MOSFET
RFL1N10L - N-Channel Power MOSFET
RFL1N12 - N-Channel Power MOSFET
RFL1N12L - N-Channel Power MOSFET
RFL1N18 - N-Channel Power MOSFET

Published: Apr 16, 2005 |