RFL2N06 - N-Channel Power MOSFET

Intersil Corporation

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Datasheet Details

Part number	RFL2N06
Manufacturer	Intersil Corporation
File Size	44.98 KB
Description	N-Channel Power MOSFET
Datasheet	RFL2N06_IntersilCorporation.pdf

RFL2N06 Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

2A, 50V and 60V.
rDS(ON) = 0.95Ω.
SOA is Power-Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFL2N05 RFL2N05.

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Published: Apr 16, 2005 |