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RFD7N10LESM - N-Channel Power MOSFET

RFD7N10LESM Description

RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.3 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MO.

RFD7N10LESM Features

* 7A, 100V
* rDS(ON) = 0.300Ω
* Temperature Compensating PSPICE® Model
* Can be Driven Directly from CMOS, NMOS, TTL Circuits
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* 175oC Operating Temperature
* Related Literature - TB

RFD7N10LESM Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-o

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N-Channel Power MOSFET Intersil Corporation
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