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RFD14N05SM9A - N-Channel Power MOSFET

Features

  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) ©2004 Fairchild Semiconductor Corporation RFD14N05SM9A Rev. C1 RFD14N05SM9A Absolute Maximum Ratings TC = 25oC, Unles.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet RFD14N05SM9A September 2013 N-Channel Power MOSFET 50V, 14A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770. Ordering Information PART NUMBER PACKAGE RFD14N05SM9A TO-252AA BRAND F14N05 Features • 14A, 50V • rDS(ON) = 0.
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