RF1S9530SM 12A/ 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

Intersil Corporation

Description

IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silico.

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Datasheet Specifications

Part number: RF1S9530SM
Manufacturer: Intersil Corporation
File Size: 63.60 KB
Datasheet: RF1S9530SM_IntersilCorporation.pdf
Description: 12A/ 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

Features

* 12A, 100V
* rDS(ON) = 0.300Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334, “Guidelines for

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. Formerly development

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RF1S9530SM 12A 100V 0.300 Ohm P-Channel Power MOSFETs Intersil Corporation

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