IRFD9120 Datasheet (Intersil Corporation)

IRFD9120, P-Channel Power MOSFET

IRFD9120 Data Sheet July 1999 File Number 2285.3 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring hig

IRFD9120 Features

* 1.0A, 100V

* rDS(ON) = 0.6Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9120 P