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IRFD210
Data Sheet July 1999 File Number
2316.3
0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17442.
Features
• 0.6A, 200V • rDS(ON) = 1.
IRFD210 Datasheet
