IRF614 Datasheet (Intersil Corporation)

IRF614, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor.

It is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

This power MOSFET is designed for applications such as switching regu

IRF614 Features

* 2.0A, 250V

* rDS(ON) = 2.0Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S