IRF614S - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF614S
Manufacturer	Fairchild Semiconductor
File Size	230.20 KB
Description	Power MOSFET
Datasheet	IRF614S-FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

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Published: Aug 4, 2016 |