IRF610A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.)
1 2 3
BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM
..
Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) ) Continuous Drain Current (TC=100 o C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 o C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds
1 O o
Value 200 3.3 2.1 10 + _ 30 44 3.3 3.8 5.0 38 0.31
- 55 to +150
Units V A A V m J A m J V/ns W W/ C o
VGS EAS IAR EAR dv/dt PD TJ , TSTG TL
O 1 O 1 O 3 O
2 o
Thermal Resistance
Symbol...
