HS9A-65647RH-Q - Radiation Hardened 8K x 8 SOS CMOS Static RAM

Intersil Corporation

Datasheet Details

Part number	HS9A-65647RH-Q
Manufacturer	Intersil Corporation
File Size	110.84 KB
Description	Radiation Hardened 8K x 8 SOS CMOS Static RAM
Datasheet	HS9A-65647RH-Q_IntersilCorporation.pdf

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM.

1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day.
Latch-up Free.
LET Threshold >250 MEV/mg/cm2.
Low Standby Supply Current 10mA (Max).
Low Operating Supply Current 100mA (2MHz).
Fast Access Time 50ns (Max), 35ns (Typ).
High Output Drive Capability.
Gated Input Buffers (Gated by E2).
Six Transistor Memory Cell.

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Published: Mar 26, 2005 |