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HGTP5N120 Datasheet - Intersil Corporation

HGTP5N120 N-Channel IGBT

HGTP5N120 Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high

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Datasheet Details

Part number:

HGTP5N120

Manufacturer:

Intersil Corporation

File Size:

89.22 KB

Description:

N-channel igbt.

HGTP5N120 Distributor

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HGTP5N120 HGTP5N120 N-Channel IGBT Intersil Corporation