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HGTP5N120BND Datasheet - Fairchild Semiconductor

HGTP5N120BND N-Channel IGBT

HGTP5N120BND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high

HGTP5N120BND_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGTP5N120BND

Manufacturer:

Fairchild Semiconductor

File Size:

216.82 KB

Description:

N-channel igbt.

HGTP5N120BND Distributor

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HGTP5N120BND HGTP5N120BND N-Channel IGBT Fairchild Semiconductor