Part number:
HGTP2N120CND
Manufacturer:
Intersil Corporation
File Size:
92.96 KB
Description:
N-channel igbt.
HGTP2N120CND_IntersilCorporation.pdf
Datasheet Details
HGTP2N120CND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high
HGTP2N120CND_IntersilCorporation.pdf
Datasheet Details
HGTP2N120CND
Intersil Corporation
92.96 KB
N-channel igbt.
HGTP2N120CND Distributor
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