Part number:
HGTP2N120BND
Manufacturer:
Intersil Corporation
File Size:
87.43 KB
Description:
N-channel igbt.
HGTP2N120BND_IntersilCorporation.pdf
Datasheet Details
HGTP2N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching appl
HGTP2N120BND_IntersilCorporation.pdf
Datasheet Details
HGTP2N120BND
Intersil Corporation
87.43 KB
N-channel igbt.
HGTP2N120BND Distributor
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