HGTP10N50F1D N-Channel IGBT

Intersil Corporation

Description

HGTP10N40F1D, HGTP10N50F1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR.
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

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Datasheet Specifications

Part number: HGTP10N50F1D
Manufacturer: Intersil Corporation
File Size: 34.04 KB
Datasheet: HGTP10N50F1D_IntersilCorporation.pdf
Description: N-Channel IGBT

Features

* 10A, 400V and 500V
* Latch Free Operation
* Typical Fall Time < 1.4µs
* High Input Impedance
* Low Conduction Loss
* Anti-Parallel Diode

Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP10N40F1D HGTP10N50F1D PACKAGE TO-220AB TO-220AB BRAND 10N40F1D 10N50F1D Terminal Diagram N-C

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HGTP10N50F1D N-Channel IGBT Intersil Corporation

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