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HGTP10N50C1D N-Channel IGBT

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Description

HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDE.
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for.

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Features

* 10A, 400V and 500V
* VCE(ON): 2.5V Max.
* TFALL: 1µs, 0.5µs
* Low On-State Voltage
* Fast Switching Speeds
* High Input Impedance

Applications

* Power Supplies
* Motor Drives

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