HGTG10N120BND - N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGTG10N120BND
Manufacturer	Intersil Corporation
File Size	82.69 KB
Description	N-Channel IGBT
Datasheet	HGTG10N120BND_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |