HGT1S7N60B3DS - 14A 600V UFS Series N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGT1S7N60B3DS
Manufacturer	Intersil Corporation
File Size	94.32 KB
Description	14A 600V UFS Series N-Channel IGBT
Datasheet	HGT1S7N60B3DS_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |