FSTJ9055R3 - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Product Overview

Intersil Corporation

Part number	FSTJ9055R3
Manufacturer	Intersil Corporation
File Size	72.60 KB
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Datasheet	FSTJ9055R3 Datasheet
Additional preview pages of the FSTJ9055R3 datasheet.

62A, -60V, rDS(ON) = 0.023Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 6nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Speci.

📁 Similar Datasheet

FST100100 - SCHOTTKY DIODE (TRANSYS)
FST100150 - Silicon Power Schottky Diode (GeneSiC)
FST10020 - Silicon Power Schottky Diode (GeneSiC)
FST100200 - Silicon Power Schottky Diode (GeneSiC)
FST10030 - Silicon Power Schottky Diode (GeneSiC)
FST10035 - Silicon Power Schottky Diode (GeneSiC)
FST10040 - Silicon Power Schottky Diode (GeneSiC)
FST10045 - 100 Amp Rectifier 20 to 100 Volts Schottky Barrier (Micro Commercial Components)

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |