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FSTJ9055D3 - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

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Intersil Corporation

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FSTJ9055D3 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs by Intersil Corporation - Datasheet Preview — Datasheet preview – FSTJ9055D3

Datasheet Details

Part number	FSTJ9055D3
Manufacturer	Intersil Corporation
File Size	72.60 KB
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Datasheet	FSTJ9055D3 Datasheet
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Product details

Features

62A, -60V, rDS(ON) = 0.023Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 6nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Speci.

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Published: Mar 23, 2005 |