RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

International Rectifier

Description

PD-97827 RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER .
The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

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Datasheet Specifications

Part number: RIC7S113E4
Manufacturer: International Rectifier
File Size: 214.70 KB
Datasheet: RIC7S113E4-InternationalRectifier.pdf
Description: RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Features

* Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for b

Applications

* The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts. Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute v

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RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER International Rectifier

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