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IRLU3114ZPbF, IRLR3114ZPbF Power MOSFET

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Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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This datasheet PDF includes multiple part numbers: IRLU3114ZPbF, IRLR3114ZPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRLU3114ZPbF, IRLR3114ZPbF
Manufacturer
International Rectifier
File Size
315.42 KB
Datasheet
IRLR3114ZPbF-InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRLU3114ZPbF, IRLR3114ZPbF.
Please refer to the document for exact specifications by model.

Applications

* PD - 97284A IRLR3114ZPbF IRLU3114ZPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 4.9mΩ S D-Pak I-Pak IRLR3114ZPbF IRLU3114ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (S

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