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IRLU3410PbF, IRLR3410PbF Power MOSFET

IRLU3410PbF Description

IRLR3410PbF IRLU3410PbF .
Fifth Generation HEXFET® Power MOSFET utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

IRLU3410PbF Features

* Logic Level Gate Drive
* Ultra Low On-Resistance
* Surface Mount (IRLR3410)
* Straight Lead (IRLU3410)
* Advances Process Technology
* Fast Switching
* Fully Avalanche Rated

IRLU3410PbF Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. HEXFET® Power MOSFET

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRLU3410PbF, IRLR3410PbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRLU3410PbF, IRLR3410PbF
Manufacturer
Infineon ↗
File Size
1.17 MB
Datasheet
IRLR3410PbF-Infineon.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRLU3410PbF, IRLR3410PbF.
Please refer to the document for exact specifications by model.

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Power MOSFET Infineon
Infineon IRLU3410PbF-like datasheet