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IRLU120N, IRLR120N Power MOSFET

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Description

l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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This datasheet PDF includes multiple part numbers: IRLU120N, IRLR120N. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRLU120N, IRLR120N
Manufacturer
International Rectifier
File Size
169.46 KB
Datasheet
IRLR120N-InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRLU120N, IRLR120N.
Please refer to the document for exact specifications by model.

Features

* 0.46 (.018) 4 1.02 (.040) 1.64 (.025) 123 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) -B - 3X 0.89 0.64 (.035) (.025) 0.25 (.010) M AMB 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LE A D A S S IG N M E N

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Rat

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