IRLU210A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 200V
* Lower RDS(ON): 1.185Ω (Typ.) BVDSS = 200 V RDS(on)
IRLR210A-FairchildSemiconductor.pdf
Datasheet Details
IRLU210A, IRLR210A
Fairchild Semiconductor
232.25 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRLU210A, IRLR210A.
Please refer to the document for exact specifications by model.
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IRLU210A Distributor
