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IRLR120N Power MOSFET

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Description

l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Features

* 0.46 (.018) 4 1.02 (.040) 1.64 (.025) 123 6.22 (.245) 5.97 (.235) 10.42 (.410) 9.40 (.370) 1.52 (.060) 1.15 (.045) 2X 1.14 (.045) 0.76 (.030) -B - 3X 0.89 0.64 (.035) (.025) 0.25 (.010) M AMB 6.45 (.245) 5.68 (.224) 0.51 (.020) M IN. 0.58 (.023) 0.46 (.018) LE A D A S S IG N M E N

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Rat

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