IRLR120NPBF Power MOSFET

International Rectifier

Description

IRLR120NPbF IRLU120NPbF l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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Datasheet Specifications

Part number: IRLR120NPBF
Manufacturer: International Rectifier
File Size: 281.25 KB
Datasheet: IRLR120NPBF-InternationalRectifier.pdf
Description: Power MOSFET

Features

* D. U. T.
* ISD controlled by Duty Factor "D"
* D. U. T. - Device Under Test + - VDD Driver Gate Drive P. W. Period D= P. W. Period VGS=10V
* D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. G D HEXFET® Power M

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IRLR120NPBF Power MOSFET International Rectifier

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