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IRLR024ZPbF Power MOSFET

IRLR024ZPbF Description

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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

IRLR024ZPbF Applications

* PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 58mΩ S ID = 16A D-Pak I-Pak IRLR024ZPbF IRLU024ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM

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Power MOSFET International Rectifier
International Rectifier IRLR024ZPbF-like datasheet