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IRLI630G Power MOSFET

IRLI630G Description

Previous Datasheet Index Next Data Sheet PD - 9.1236 IRLI630G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

IRLI630G Applications

* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single s

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