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IRL3215 HEXFET Power MOSFET

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Description

PD- 91792 IRL3215 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRL3215
Manufacturer
International Rectifier
File Size
144.55 KB
Datasheet
IRL3215_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4)

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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