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IRL3102 Power MOSFET

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Description

PD- 9.1694A PRELIMINARY l l l l IRL3102 HEXFET® Power MOSFET D Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC.
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment.

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Features

* Bldg. , 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www. irf. com/ Data and specifications subject to change without notice. 11/97

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. TO-220AB ID = 61A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR

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