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IRHQ7214 - (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHQ7110 Radiation Hardened Power MOSFET
IRHQ3110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3214 (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ4110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ4214 (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 93828A IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) IRHQ4214 IRHQ8214 600K Rads (Si) 1000K Rads (Si) TM 250V, QUAD N-CHANNEL RAD-Hard HEXFET ™ ® MOSFET TECHNOLOGY RDS(on) 2.25Ω 2.25Ω 2.25Ω 2.25Ω ID 1.6A 1.6A 1.6A 1.6A LCC-28 International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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