IRHNS9A97260 Radiation Hardened Power MOSFET

International Rectifier

Description

IRHNS9A97260 (JANSR2N7666U2A) Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology PD-97990.
IR HiRel R9 technology provides superior power MOSFETs for space applications.

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Datasheet Specifications

Part number: IRHNS9A97260
Manufacturer: International Rectifier
File Size: 435.47 KB
Datasheet: IRHNS9A97260-InternationalRectifier.pdf
Description: Radiation Hardened Power MOSFET

Features

* Single event effect (SEE) hardened (up to LET of 90.5 MeV
* cm2/mg)
* Low RDS(on)
* Improved SOA for linear mode operation
* Fast switching
* Low total gate charge
* Simple drive requirements
* Hermetically sealed
* Electrically iso

Applications

* DC-DC converter
* Motor drives
* Power distribution
* Latching current limiter Product Validation Product Summary
* BVDSS: -200V
* ID : -62A
* RDS(on), max : 32m
* QG, max: 230nC
* REF: MIL-PRF-19500/791 SupIR-SMD™ Qualifie

IRHNS9A97260 Distributors

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IRHNS9A97260 Radiation Hardened Power MOSFET International Rectifier

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