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IRGSL6B60KDPbF, IRGS6B60KDPBF - Insulated Gate Bipolar Transistor

International Rectifier

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IRGSL6B60KDPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGSL6B60KDPbF, IRGS6B60KDPBF. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IRGSL6B60KDPbF, IRGS6B60KDPBF
Manufacturer	International Rectifier ↗
File Size	310.35 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS6B60KDPBF-InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRGSL6B60KDPbF, IRGS6B60KDPBF. Please refer to the document for exact specifications by model.

IRGSL6B60KDPbF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Pe.

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Published: Feb 16, 2016 |