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IRGSL6B60KD, IRGB6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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IRGSL6B60KD Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGSL6B60KD, IRGB6B60KD. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IRGSL6B60KD, IRGB6B60KD
Manufacturer	International Rectifier ↗
File Size	349.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60KD_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRGSL6B60KD, IRGB6B60KD. Please refer to the document for exact specifications by model.

IRGSL6B60KD Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

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Published: Aug 17, 2007 |