IRGR3B60KD2PBF Insulated Gate Bipolar Transistor

International Rectifier

Description

PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRGR3B60KD2PBF
Manufacturer: International Rectifier
File Size: 306.76 KB
Datasheet: IRGR3B60KD2PBF-InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free Benefits
* B

IRGR3B60KD2PBF Distributors

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IRGR3B60KD2PBF Insulated Gate Bipolar Transistor International Rectifier

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