IRGR2B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE IRGR2B60KDPbF C VCES = 600V IC = 3.7A, TC = 100°C G E .

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Datasheet Specifications

Part number: IRGR2B60KDPBF
Manufacturer: International Rectifier
File Size: 762.68 KB
Datasheet: IRGR2B60KDPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

*  Low VCE (ON) Non Punch Through IGBT technology
*  Low Diode VF
*  10µs Short Circuit Capability
*  Square RBSOA
*  Ultra-soft Diode Reverse Recovery Characteristics
*  Positive VCE (ON) temperature co-efficient
*  Lead-free Benefits
*  Benchmark Efficiency for Moto

IRGR2B60KDPBF Distributors

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IRGR2B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGR2B60KDPBF-like datasheet