IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Feat.
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGBC40M-S
Manufacturer: International Rectifier
File Size: 85.59 KB
Datasheet: IRGBC40M-S_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Max. 600 40 24 80 80 10 ±20 15 160 65 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EAR

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IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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