IRGBC40K - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGBC40K Datasheet Preview — Preview of IRGBC40K PDF

Datasheet Details

Part number	IRGBC40K
Manufacturer	International Rectifier ↗
File Size	188.42 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC40K_InternationalRectifier.pdf

IRGBC40K Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Short circuit rated - 10µs @ 125°C, V GE = 15V.
Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.2V @VGE = 15V, I C = 25A n-channel.

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Published: May 14, 2006 |